Title :
FET protection of GMR and TMR sensors
Author :
Iben, Icko Eric Timothy ; Loiseau, Alain ; Gebreselasie, Ephrem
Author_Institution :
Tape Head Dev. Group, IBM Corp., San Jose, CA, USA
Abstract :
TMR and GMR sensors used for reading data written on magnetic media can be damaged by ns wide pulses below 1 Volt. Since diodes turn on around 1 V, they offer little ESD protection. This paper explores the use of diode-connected FETs to protect MR sensors below 1 V.
Keywords :
electrostatic discharge; field effect transistors; giant magnetoresistance; magnetic sensors; magnetoresistive devices; tunnelling magnetoresistance; ESD protection; FET protection; GMR sensors; TMR sensors; diode-connected FET; diodes; magnetic media; voltage 1 V; Electrostatic discharges; Field effect transistors; Magnetic sensors; Resistance; Schottky diodes; Tunneling magnetoresistance;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
