Electronics calculations for an ideal planar parallel vacuum microelectronics diode

Author

Chen, B.X. ; Liu, G.Y. ; Chen, X.D. ; Xia, S.H. ; Ding, Y.G. ; Li, H.Y. ; Yang, J.X.

Author_Institution

Wuxi CSI Electron. Co. Ltd., China

fYear

2005

Firstpage

117

Lastpage

118

Abstract

Potential distribution function, electric field distribution function and electron velocity distribution function inside an ideal planar parallel vacuum microelectronics (P-VME) diode are derived through solving a simplified cubic equation from a three halves power relationship between the anode current density and the anode voltage. The calculated values of the anode voltage, the anode electric field intensity and the anode electron velocity increases to about 50.00%, 73.21% and 22.47%, respectively, when the influence of space charge inside the P-VME diode is considered.

Keywords

diodes; field emitter arrays; space charge; vacuum microelectronics; anode current density; anode electric field intensity; anode electron velocity; anode voltage; cubic equation; electric field distribution function; electron velocity distribution function; electronics calculations; field emitter arrays; ideal planar parallel vacuum microelectronics diode; potential distribution function; space charge; three halves power relationship; Anodes; Current density; Diodes; Distribution functions; Electric potential; Electrons; Equations; Microelectronics; Space charge; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619513

Filename

1619513