Title :
Dynamic aspects to current spreading in GGNmosts
Author :
de Raad, G. ; Quax
Author_Institution :
NXP Semicond., Nijmegen, Netherlands
Abstract :
Transient current spreading in ggnmosts is studied using 3D-TCAD and TLP. The physical mechanism behind current expansion is explained and related to device design. Also, a technique for studying transient current spreading from the V(t)-waveforms is presented. Both insights are applied to solving premature device failure.
Keywords :
MOSFET; failure analysis; technology CAD (electronics); transient analysis; 3D-TCAD; GGNmosts; TLP; grounded gate n-MOSFET; transient current spreading; Ions; Logic gates;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
