DocumentCode :
1667343
Title :
Analytic and numerical analysis of average energies of field electrons
Author :
Choi, Tae S. ; Bae, Hae K. ; Kim, Jae K. ; Chung, Moon S.
Author_Institution :
Dept. of Phys., Ulsan Univ., South Korea
fYear :
2005
Firstpage :
121
Lastpage :
122
Abstract :
Exact quasi-equilibrium analysis for the average energy, <ε>, of the field electrons emitted from the semiconductor as well as the metallic surfaces is discussed. The non-equilibrium effects at high temperatures and strong fields are calculated to investigate the average energy of field electrons for both metals and semiconductors. WKB approximation is used in obtaining the analytic expression of <ε> for both metals and semiconductors. The exact scheme is used in numerical calculation for both field electron energy distribution, j(ε), and <ε> without the WKB approximation. The difference between the two values of <ε> obtained analytically and numerically is found to be small for semiconductors such as Si and III-V nitrides. The obtained analytic form of <ε> can be used in finding the values of the average energy of field electrons.
Keywords :
III-V semiconductors; WKB calculations; electron field emission; elemental semiconductors; metals; silicon; III-V nitrides; Si; WKB approximation; analytic analysis; average energies; exact quasi equilibrium analysis; exact scheme; field electron energy distribution; field electrons; metallic surface; nonequilibrium effects; numerical analysis; semiconductor surface; strong fields; Cathodes; Cooling; Effective mass; Electron emission; Ellipsoids; Feeds; Moon; Numerical analysis; Physics; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2005.1619515
Filename :
1619515
Link To Document :
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