Realization of higher output power capability with the Bi-mode Insulated Gate Transistor (BIGT)

In this paper, we discuss the potential of realizing future applications with much increased output power capability utilizing the newly developed bi-mode insulated gate transistor (BIGT). The BIGT represents an advanced reverse conducting (RC) IGBT concept implying that the device can operate in both freewheeling diode mode and (IGBT) transistor mode by utilizing the same available silicon volume in both modes. The BIGT design differs from the standard RC-IGBT in that it targets to fully replace the state-of-the-art two-chip IGBT/diode approach with a single BIGT chip. This is achieved while also being capable of improving on the over-all performance especially under hard switching conditions where low static and dynamic losses, soft turn-off and high SOA are essential characteristics. The practical realization of the BIGT technology will provide a potential solution for future high voltage applications demanding compact systems with higher power levels, which could prove to be beyond the capability of the standard two-chip approach.