Title :
Junction engineering for SOI SCR triggering and performance improvement
Author :
You Li ; Junjun Li ; Gauthier, R.
Author_Institution :
Semicond. R&D Center, IBM, Essex Junction, VT, USA
Abstract :
Junction engineering solutions are presented in this work to improve the triggering and performance of SCR devices in an advanced 22nm SOI CMOS technology. Several SCR cathode junction formations are investigated including implants energy, dosage, with or without halo/extension implants. TLP and HBM results are presented in details.
Keywords :
CMOS integrated circuits; cathodes; semiconductor junctions; silicon-on-insulator; thyristors; HBM; SCR cathode junction formations; SOI CMOS technology; SOI SCR performance improvement; SOI SCR triggering; TLP; halo-extension implants; junction engineering solutions; size 22 nm; Cathodes; Electrostatic discharges; Immune system; Implants; Junctions; Performance evaluation; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
