DocumentCode :
166752
Title :
Electrical Overstress robustness and test method for ICs
Author :
Kamdem, Alain ; Martin, Patrick ; Lefebvre, Jean-Luc ; Berthet, Fanny ; Domenges, B. ; Guillot, Phillipe
Author_Institution :
Lab. Commun, Normandie Univ., Caen, France
fYear :
2014
fDate :
7-12 Sept. 2014
Firstpage :
1
Lastpage :
7
Abstract :
With electronics technology improvements, Electrical OverStress (EOS) failures due to Over Voltage Stress (OVS) event became the current issue instead of ElectroStatic Discharge (ESD). To better specify devices Absolute Maximum Rating (AMR), this study deepens the knowledge of robustness threshold and helps understanding failure mechanisms on ICs components besides ESD.
Keywords :
electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; AMR; EO failures; ESD; ICs components; OVS; absolute maximum rating; electrical overstress robustness threshold; electrostatic discharge; failure mechanisms; overvoltage stress; test method; Degradation; Earth Observing System; Electrostatic discharges; Failure analysis; Integrated circuits; Robustness; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
ISSN :
0739-5159
Type :
conf
Filename :
6968811
Link To Document :
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