DocumentCode
1667539
Title
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode
Author
Li, Yan ; Lee, Seungpil ; Oowada, Ken ; Nguyen, Hao ; Nguyen, Qui ; Mokhlesi, Nima ; Hsu, Cynthia ; Li, Jason ; Ramachandra, Venky ; Kamei, Teruhiko ; Higashitani, Masaaki ; Pham, Tuan ; Honma, Mitsuaki ; Watanabe, Yoshihisa ; Ino, Kazumi ; Le, Binh ; Woo
Author_Institution
Sandisk, Milpitas, CA, USA
fYear
2012
Firstpage
436
Lastpage
437
Abstract
This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) and cost savings from an improved architecture and tightly packed peripheral circuits. Air gap [2,3] technology further improves write throughput by reducing neighbor interference and WL RC. A toggle mode 400Mb/s I/O interface reduces system overhead and enhances overall performance.
Keywords
NAND circuits; flash memories; NAND flash memory; bit rate 18 Mbit/s; bit rate 400 Mbit/s; peripheral circuits; size 19 nm; system overhead; toggle mode I/O interface; Computer architecture; Couplings; Flash memory; Layout; Microprocessors; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4673-0376-7
Type
conf
DOI
10.1109/ISSCC.2012.6177080
Filename
6177080
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