Title :
High flexibility SCR clamp for ESD protection in BCD power technology
Author :
Yi-Feng Chang ; Tsung-Che Tsai ; Wan-Yen Lin ; Chia-Wei Hsu ; Jam-Wem Lee ; Shui-Ming Cheng ; Ming-Hsiang Song
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
We propose a new SCR-based ESD device and its holding voltage boosting methodology to meet ESD design window for high-voltage smart power IC´s application. Experimental data shows that the holding voltage larger than 40 V and the failure current higher than 60mA/μm is achieved.
Keywords :
electrostatic discharge; power integrated circuits; thyristors; BCD power technology; ESD design window; ESD protection; SCR-based ESD device; failure current; high flexibility SCR clamp; high-voltage smart power IC application; voltage boosting methodology; Breakdown voltage; Electric breakdown; MOSFET; Resistance; Thyristors; Tunneling;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
