DocumentCode
1667630
Title
Si-based resonant tunneling diodes for room temperature operation
Author
Wu, K.Y. ; Yu, I.S. ; Wang, K.Y. ; Cheng, H.H. ; Hung, K.M. ; Sun, G. ; Soref, R.A.
Author_Institution
Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan
fYear
2010
Firstpage
1252
Lastpage
1253
Abstract
We report a theoretical investigation on the electrical characteristic of n-type resonance tunneling diode for IV-IV compound. From the analysis, it shows that PVR ratio of the D4 band is significant larger than the D2 band as due to the much smaller effective mass of the D4 band. More importantly, a different structure is employed for room temperature operation and a reasonable PVR ratio is obtained which is desired for the application.
Keywords
elemental semiconductors; resonant tunnelling diodes; silicon; D2 band; D4 band; IV-IV compound; PVR ratio; Si; effective mass; electrical characteristic; n-type resonance tunneling diode; room temperature; temperature 293 K to 298 K; Buffer layers; Diodes; Effective mass; Electric variables; Electrodes; Electrons; Germanium silicon alloys; Resonant tunneling devices; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424923
Filename
5424923
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