Title : 
GaN based nanorod technology for solid state lighting
         
        
        
            Author_Institution : 
Institute of Semiconductor Technology
         
        
        
        
        
            Abstract : 
GaN nanorods and 3D columns recently attracted a lot of attention since they are expected to be an exciting new route towards solid state lighting. In contrast to a planar thin film technology, a completely 3-dimensional nanorod approach gives more freedom in the device design. E.g., a core-shell design of LEDs based on 3D GaN offer a dramatically enhanced active area per wafer footprint, since the active area is scaling with height of the 3D structures. High quality core-shell devices will have a tremendous impact on LED technology.
         
        
            Keywords : 
III-V semiconductors; gallium compounds; light emitting diodes; lighting; nanorods; thin films; wide band gap semiconductors; 3D columns; 3D structures; GaN; LED core-shell design; dramatically enhanced active area; high quality core-shell devices; nanorod technology; planar thin film technology; solid state lighting; three-dimensional nanorod approach; wafer footprint; Educational institutions; Gallium nitride; Light emitting diodes; MOCVD; Molecular beam epitaxial growth; Nanoscale devices; Solid state lighting;
         
        
        
        
            Conference_Titel : 
Lasers and Electro-Optics (CLEO), 2012 Conference on
         
        
            Conference_Location : 
San Jose, CA
         
        
            Print_ISBN : 
978-1-4673-1839-6