Fabrication and characterization of Pt nanosplit emitter using electron beam induced deposition

The resistance and electron coherence length of Pt nanowires fabricated using electron beam (EB) induced deposition were investigated. It was shown that post annealing was effective for reducing the resistance of the EB deposited wires. The EB deposited Pt wires after 400°C annealing showed positive magnetoresistance at low temperatures due to the weak antilocalization. The obtained phase-breaking lengths from the fitting became about 5 nm at 77 K and 15 nm at 4 K, It indicates that the post annealing process is required for the nanosplit emitter and the nanosplit emitter with a gap size of 12 nm must be operated at 4 K in order to observe the electron interference pattern from the nanosplit emitter. Further investigation with nanosplit-emitters after annealing at lower operation temperatures is in progress.