Title :
Effects of potassium hydroxide post-treatments on the field-emission properties of thermal chemical vapor deposited carbon nanotubes
Author :
Lee, Li-Ying ; Lee, Shih-Fong ; Chang, Yung-Ping ; Hsiao, Wei-Shao
Author_Institution :
Dept. of Electr. Eng., Dayeh Univ., Changhua, Taiwan
Abstract :
In this study, a simple potassium hydroxide (KOH) treatment was applied to functionalize the surface and to modify the structures of multi-walled carbon nanotubes (CNTs) grown on silicon substrates by thermal chemical vapor deposition (thermal CVD). Scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, and energy dispersive spectrometer (EDS) were employed to investigate the mechanism causing the modified field-emission properties of CNTs. From our experimental data, it is found that after KOH treatment the emitted currents were enhanced by more than one order of magnitude compared with those of the untreated CNTs. The emitted current density of CNTs increases from 0.44 mA/cm2 to 7.92 mA/cm2 after 30 minutes of KOH solution treatment. This method provides a simple, economical, and effective way to enhance the CNT field-emission properties.
Keywords :
Raman spectra; X-ray chemical analysis; carbon nanotubes; chemical vapour deposition; current density; electron field emission; nanofabrication; scanning electron microscopy; surface treatment; transmission electron microscopy; C; KOH solution treatment; Raman spectroscopy; current density; energy dispersive spectrometer; field-emission properties; multi-walled carbon nanotubes; potassium hydroxide post-treatments; scanning electron microscopy; thermal chemical vapor deposition; time 30 min; transmission electron microscopy; Carbon nanotubes; Chemical vapor deposition; Dispersion; Mechanical factors; Raman scattering; Scanning electron microscopy; Silicon; Spectroscopy; Surface treatment; Transmission electron microscopy;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424931