Title :
Optical properties of Zn2TiO4 prepared by thermal oxidation method
Author :
Santhaveesuk, Theerapong ; Wongratanaphisan, Duangmanee ; Choopun, Supab
Author_Institution :
Dept. of Phys. & Mater. Sci., Chiang Mai Univ., Chiang Mai, Thailand
Abstract :
Zn2TiO2 thick films were prepared by using thermal oxidation method at 1000°C for 24 h under normal atmosphere, for 0, 10, 20 and 30 mol% of TiO2. The thick films were characterized using XRD, FE-SEM, EDS, and RS. The results indicated that the thick films consisted of hexagonal wurtzite ZnO and face-center cubic Zn2TiO4 phases, for 10-30 mol% of TiO2. The Zn2TiO4 phase was increased as the increasing of the mol% of TiO2 and became a major phase when TiO2 reached 30 mol%, in distinction with ZnO. The optical energy band gap of thick films was measured by the help of reflection spectra. The optical energy band gap were ranging from about 3.30-3.58 eV, as the mol% of TiO2 increased from 0-30.
Keywords :
II-VI semiconductors; Raman spectra; X-ray chemical analysis; X-ray diffraction; field emission electron microscopy; optical constants; oxidation; reflectivity; scanning electron microscopy; surface morphology; thick films; titanium compounds; wide band gap semiconductors; zinc compounds; EDS; FE-SEM; XRD; Zn2TiO4; ZnO-TiO2; face-center cubic phase; hexagonal wurtzite phase; optical energy band gap; optical properties; reflection spectra; surface morphology; thermal oxidation; thick films; Atmosphere; Energy measurement; Optical films; Optical reflection; Oxidation; Photonic band gap; Thick films; Thickness measurement; X-ray scattering; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424934