Sub-microsecond photo-excitation of gated p-type silicon field emitter arrays

This paper demonstrated sub-microsecond photoresponse on gated Si field emitter array (FEA) using lightly p-doped Si, which is two orders of magnitude better than the authors´ previous results. The authors anticipated that a device structure optimized to reduce series resistance and an improved RF circuit would result in pulse response approaching the sub-nanosecond regime.