DocumentCode :
1667953
Title :
Status and technology of SOI substrate material
Author :
Allen, L.P. ; Skinner, W. ; Cate, A.
Author_Institution :
Epion Corp., Billerica, MA, USA
fYear :
2001
Firstpage :
5
Lastpage :
7
Abstract :
Silicon-on-insulator technology announcements during the past year show, without doubt, that SOI substrates are entering mainstream IC production. High performance microprocessors and advanced circuitry from significant worldwide chipmakers are moving to silicon-on-insulator substrates. Benefits from decreased operating voltages, low power consumption, higher radiation and temperature tolerance, and device scaling are realized in existing and planned SOI circuit applications. Key factors leading up to this present upbeat material status are that SOI substrate quality and cost have attained improved and acceptable levels for end-user industries. Areas of substrate material challenges remain, however, with respect to thin (<50nm) silicon material consistency, cost, and volume.
Keywords :
CMOS integrated circuits; integrated circuit manufacture; integrated circuit technology; semiconductor technology; silicon-on-insulator; BOX; SOI substrates; Si-SiO/sub 2/; advanced circuitry; device scaling; high performance microprocessors; low power consumption; mainstream IC production; material consistency; material status; radiation tolerance; substrate cost; substrate quality; temperature tolerance; Circuits; Costs; Demand forecasting; Economic forecasting; Manufacturing industries; Materials science and technology; Production; Semiconductor device manufacture; Silicon on insulator technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
ISSN :
1078-621X
Print_ISBN :
0-7803-6739-1
Type :
conf
DOI :
10.1109/SOIC.2001.957958
Filename :
957958
Link To Document :
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