DocumentCode :
1667971
Title :
Nanocrystalline TiO2 thin films prepared by electron beam evaporation for photodetector applications
Author :
Huang, Huolin ; Xie, Yannan ; Wu, Zhengyun
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen, China
fYear :
2010
Firstpage :
1222
Lastpage :
1223
Abstract :
TiO2 thin films were deposited on quartz substrates by electron beam evaporation and then annealed at 700°C for 1 h in air for the photodetector applications. Various characterization techniques were used to study the properties of the films. X-ray diffraction (XRD) and Raman results indicated that the post-annealed films exhibited single anatase phase and the grain size was 78 nm. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) images showed that the films were smooth and compact. The UV-vis transparency spectra and photoluminescence (PL) spectra were applied to analyze the optical properties and emission features of the films. These results suggest the TiO2 thin films prepared in our experiments are a promising candidate material for the photodetector applications.
Keywords :
Raman spectra; X-ray diffraction; annealing; atomic force microscopy; electron beam deposition; grain size; nanofabrication; nanostructured materials; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; titanium compounds; transparency; ultraviolet spectra; vacuum deposited coatings; vacuum deposition; visible spectra; Raman shifts; SiO2; TiO2; UV-vis transparency spectra; X-ray diffraction; atomic force microscopy; electron beam evaporation; grain size; nanocrystalline thin films; optical properties; photodetector; photoluminescence spectra; post-deposition annealing; scanning electron microscopy; single anatase phase; temperature 700 degC; time 1 h; Annealing; Atomic force microscopy; Electron beams; Optical films; Photodetectors; Scanning electron microscopy; Sputtering; X-ray diffraction; X-ray imaging; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424941
Filename :
5424941
Link To Document :
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