DocumentCode
1668043
Title
High average power (200 mW) 40 GHz mode-locked DBR lasers with integrated tapered optical amplifiers
Author
Akbar, Jehan ; Hou, Lianping ; Haji, Mohsin ; Dylewicz, Rafal ; Strain, Michael J. ; Marsh, John H. ; Bryce, A. Catrina ; Kelly, Anthony E.
Author_Institution
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4.3 ps and average output power of 200 mW.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser mode locking; optical fibre amplifiers; semiconductor optical amplifiers; AlGaInAs-InP; frequency 40 GHz; integrated tapered optical amplifiers; integrated tapered semiconductor optical amplifiers; mode-locked DBR lasers; passively mode-locked lasers; power 200 mW; time 4.3 ps; wavelength 1.55 mum; Laser mode locking; Optical device fabrication; Optical waveguides; Power generation; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326205
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