Reparation of ZnO nanowires and their field emission properties

Author

Bai, Yun-Fan ; Ren, Shan ; Deng, Shao-zhi ; Chen, Jun ; Xu, Ning-sheng

Author_Institution

Center for Nanotechnol. Res., Zhongshan Univ., Guangzhou, China

fYear

2005

Firstpage

178

Lastpage

179

Abstract

Straight crystalline zinc oxide (ZnO) nanowires have been grown in air or oxygen using a simple thermal oxidation of Zn block at temperature 350°C or 400°C. The structure and morphology of the nanowires were studied by SEM and XRD. The fabricated nanowires have a uniform distribution in their diameters (about 30 nm) and length (about 1 μm) and showed good field emission properties. Typical turn-on and threshold field for the electron emission were 6.5 V/μm and 11.0 V/μm, respectively. The results show that ZnO nanowires are a potential candidate as cold cathode.

Keywords

II-VI semiconductors; X-ray diffraction; cathodes; crystal growth; crystal morphology; electron field emission; materials preparation; nanowires; oxidation; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; 350 degC; 400 degC; SEM; XRD; ZnO; ZnO nanowires; cold cathode; crystalline zinc oxide; electron emission; field emission properties; morphology; structure; thermal oxidation; threshold field; turn-on field; uniform diameter distribution; Crystalline materials; Crystallization; Electron emission; Nanowires; Optical waveguides; Oxidation; Scanning electron microscopy; Temperature; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619544

Filename

1619544