Title :
BOX layer formation by oxygen precipitation at implantation damage of light ions
Author_Institution :
Silicon Systems Res. Labs, NEC Corp, Ibaraki, Japan
Abstract :
We have developed a novel SOI fabrication technique in which light ions such as H/sup -/ and He/sup -/ are implanted into a Si substrate (instead of O/sup i/mplantation in the SIMOX process). The atmospheric oxygen atoms precipitate at the implantation damage during annealing in an oxidized atmosphere. A continuous BOX layer was successfully formed in the Si substrate by choosing appropriate conditions - slow ramping rate and high oxygen concentration in the atmosphere.
Keywords :
annealing; buried layers; ion implantation; precipitation; silicon-on-insulator; BOX layer formation; SEM; SOI fabrication technique; Si-SiO/sub 2/; Si:H; Si:He; annealing; continuous BOX layer; high oxygen concentration; light ion implantation damage; oxygen nucleation centers; oxygen precipitation; slow ramping rate; Annealing; Atmosphere; Atomic layer deposition; Chemicals; Fabrication; Helium; Ion implantation; National electric code; Oxygen; Silicon;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957962
