DocumentCode :
1668132
Title :
Microstructure and phase transformation of zinc titanate thin films
Author :
Lee, Ying-Chieh ; Huang, Yen-Lin ; Lee, Wen-His ; Chen, Bao-Hsing ; Shieu, Fuh-Sheng
Author_Institution :
Dept. of Mater. Eng., Nat. PingTung Univ. of Technol. & Sci., Pingtung, Taiwan
fYear :
2010
Firstpage :
1214
Lastpage :
1215
Abstract :
ZnTiO3 have excellent microwave dielectric properties, can be as high-frequency (>10 GHz) capacitors among the passive components industry. In this study, the microstructures and phase transformations of zinc titanate thin films were investigated. Zinc titanate thin films were synthesized on SiO2/Si(100) substrates by RF magnetron sputtering using a sintered ceramics target of ZnTiO3 at various Ar/O2 mixing ratios (100/0, 90/10, 80/20), the substrate temperatures ranging from 25 to 400°C and then the as-deposited films were annealed at temperatures ranging from 600 to 900°C. The samples were analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). A single phase of ZnTiO3 (hexagonal) films could be obtained and existed at substrate temperatures of 400°C, and annealing temperatures between 700 and 800°C for 2 h. However, it is found the hexagonal ZnTiO3 decomposes into cubic Zn2TiO4 and rutile TiO2 at annealing temperature 900°C. This result is unlike to bulk ZnTiO3 ceramics which the hexagonal ZnTiO3 phase remains stable at temperatures below 945°C, and then it decomposes to the cubic Zn2TiO4 and TiO2 phases at 945°C, as indicated in the phase diagram of ZnO-TiO2. However, the unit cell size of the ZnTiO3 films crystal is a = ~5.075 ¿, c = ~ 13.85 ¿. In addition, Zn2Ti3O8 phase was observed when the substrate temperature is below 300°C to accompany with annealing temperature at 800°C.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; dielectric thin films; phase diagrams; scanning electron microscopy; semiconductor growth; solid-state phase transformations; sputter deposition; sputtered coatings; transmission electron microscopy; zinc compounds; RF magnetron sputtering; Si; SiO2-Si; X-ray diffraction; ZnTiO3; annealing; atomic force microscopy; microstructure; microwave dielectric properties; mixing ratios; phase diagram; phase transformation; scanning electron microscopy; temperature 25 degC to 400 degC; temperature 600 degC to 900 degC; temperature 945 degC; thin films; time 2 h; transmission electron microscopy; Annealing; Atomic force microscopy; Dielectric thin films; Microstructure; Scanning electron microscopy; Sputtering; Temperature; Titanium compounds; Transistors; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424948
Filename :
5424948
Link To Document :
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