DocumentCode :
1668188
Title :
Development of a 10 kW high power density three-phase ac-dc-ac converter using SiC devices
Author :
Lai, Rixin ; Wang, Fred ; Ning, Puqi ; Zhang, Di ; Jiang, Dong ; Burgos, Rolando ; Boroyevich, Dushan ; Karimi, Kamiar J. ; Immanuel, Vikram D.
Author_Institution :
Center for Power Electron. Syst. (CPES), Virginia Tech, Blacksburg, VA, USA
fYear :
2009
Firstpage :
1
Lastpage :
12
Abstract :
This paper presents the development and experimental performance of a 10 kW high power density three-phase ac-dc-ac converter. The converter consists of a Vienna-type rectifier front-end and a two-level voltage source inverter (VSI). In order to reduce the switching loss and achieve a high operating junction temperature, a SiC JFET and SiC Schottky diode are utilized. Design considerations for the phase-leg units, gate drivers, integrated input filter-combining EMI and boost inductor stages-and the system protection are described in full detail. Experiments are carried out under different operating conditions, and the results obtained verify the performance and feasibility of the proposed converter system.
Keywords :
AC-DC power convertors; DC-AC power convertors; JFET circuits; Schottky diodes; silicon compounds; wide band gap semiconductors; JFET circuits; Schottky diode; SiC; Vienna-type rectifier; gate drivers; phase-leg units; three-phase ac-dc-ac converter; voltage source inverter; Analog-digital conversion; Electromagnetic interference; Inductors; Inverters; Rectifiers; Schottky diodes; Silicon carbide; Switching loss; Temperature; Voltage; High power density; SiC devices; ac-dc-ac converter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
Type :
conf
Filename :
5279036
Link To Document :
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