• DocumentCode
    166823
  • Title

    Characterization methods to replicate EOS fails

  • Author

    Smedes, T. ; Christoforou, Y. ; Zhao, Sicong

  • Author_Institution
    NXP Semicond., Nijmegen, Netherlands
  • fYear
    2014
  • fDate
    7-12 Sept. 2014
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    Two methods are proposed to complement traditional TLP methods for characterization of devices and ICs for EOS. These are used to determine the power profile: the minimum power needed to cause damage as function of stress duration. The method is applied to analyze typical EOS problems, which is demonstrated by an extensive discussion of three examples. Stress above the power profile level leads to EOS damage. It is shown that this can be independent of pulse duration.
  • Keywords
    electrostatic discharge; EOS fails; ESD; ICs; TLP methods; device characterization method; power profile level; pulse duration; stress; Earth Observing System; Electrostatic discharges; Pulse measurements; RNA; Stress; Stress measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6968849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=166823