Title :
Design analysis of thin-body silicide source/drain devices
Author :
Kedzierski, J. ; Meikei Ieong ; Peiqi Xuan ; Bokor, J. ; Tsu-Jae King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The use of complementary low-barrier silicides is investigated for reducing the series resistance of thin-body silicon-on-insulator (SOI) devices. Two different thin-body device types are simulated, one in which the source/drain regions are formed by the silicide without doping, and another in which the silicide source/drains are terminated by a doped extension region.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; semiconductor doping; silicon; silicon compounds; silicon-on-insulator; NMOS; PMOS; SOI devices; Si-SiO/sub 2/; complementary low-barrier silicides; design analysis; doped extension region; doping; series resistance; silicide; silicide source/drains; source/drain regions; thin-body silicide source/drain devices; thin-body silicon-on-insulator devices; Contact resistance; Doping; Electric resistance; Immune system; MOS devices; Schottky barriers; Silicides; Silicon devices; Silicon on insulator technology; Tunneling;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957965
