DocumentCode :
166825
Title :
Variation-Effect Analysis of MTJ-Based Multiple-Valued Programmable Resistors
Author :
Natsui, Masanori ; Hanyu, Takahiro
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear :
2014
fDate :
19-21 May 2014
Firstpage :
243
Lastpage :
247
Abstract :
Nonvolatile multiple-valued programmable resistors based on series-parallel-connected magnetic tunnel junction (MTJ) devices are proposed for process-variation-resilient logic LSIs. Since the proposed resistors are designed using several MTJ devices of equal size, they can be fabricated without using special fabrication technologies such as that used to fabricate conventional MTJ-based multilevel resistors. In this paper, the process variation tolerance of the proposed resistors is evaluated through the Monte-Carlo analysis using a SPICE simulator with built-in MTJ device model.
Keywords :
Monte Carlo methods; integrated circuit modelling; large scale integration; logic circuits; magnetic tunnelling; programmable circuits; resistors; semiconductor device models; MTJ-based multiple-valued programmable resistors; Monte-Carlo analysis; SPICE simulator; built-in MTJ device model; fabrication technology; nonvolatile multiple-valued programmable resistors; process variation tolerance; process-variation-resilient logic LSI; resistor design; series-parallel-connected MTJ devices; series-parallel-connected magnetic tunnel junction devices; variation-effect analysis; Fabrication; Integrated circuit modeling; Magnetic tunneling; Monte Carlo methods; Resistance; Resistors; SPICE; Combined resistance; Magnetic tunnel junction device; Monte-Carlo analysis; Process variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Multiple-Valued Logic (ISMVL), 2014 IEEE 44th International Symposium on
Conference_Location :
Bremen
ISSN :
0195-623X
Type :
conf
DOI :
10.1109/ISMVL.2014.50
Filename :
6845028
Link To Document :
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