Single-mask multiple lateral nanodiamond field emitter structure microfabrication technique

An efficient microfabrication process technique developed to realize multiple lateral diamond field emitter structures on the same chip using a single mask is reported. Nanodiamond films with grain size as small as 5 nm have been realized through the process of CH₄/H₂/N₂ MPECVD in an ASTeXreg machine with a 1.5 kW generator operating at 2.45 GHz. Arrays of lateral diode and triode geometries with inter-electrode spacing as small as 2 mum have been achieved, enabling the lateral devices to operate at a low voltage. The uniform deposition capability of nanodiamond on large areas (wafer-scale) permits batch-fabrication of these lateral emitters. The nanodiamond lateral devices are applicable to vacuum nanoelectronics, sensors, and NEMS systems