DocumentCode
1668307
Title
A 530mV 10-lane SIMD processor with variation resiliency in 45nm SOI
Author
Pawlowski, Robert ; Krimer, Evgeni ; Crop, Joseph ; Postman, Jacob ; Moezzi-Madani, Nariman ; Erez, Mattan ; Chiang, Patrick
Author_Institution
Oregon State Univ., Corvallis, OR, USA
fYear
2012
Firstpage
492
Lastpage
494
Abstract
Near-threshold computing exhibits improved energy efficiency compared to nominal super-threshold operation [1, 2]. Two critical bottlenecks prevent mainstream adoption of low-VDD operation: degraded logic delay resulting in significantly lower throughput than at super-threshold, and excessive, unpredictable delay variation caused by increased sensitivity to process and dynamic variations.
Keywords
delays; elemental semiconductors; microprocessor chips; multiprocessing systems; parallel processing; silicon; silicon-on-insulator; Near-threshold computing; SIMD processor; SOI; Si; energy efficiency; logic delay degradation; low-VDD operation; nominal super-threshold operation; size 45 nm; unpredictable delay variation; voltage 530 mV; Delay; Energy efficiency; Error analysis; Pipelines; Throughput; Weaving;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4673-0376-7
Type
conf
DOI
10.1109/ISSCC.2012.6177105
Filename
6177105
Link To Document