DocumentCode
166834
Title
Pseudo p-i-n avalanche diode clamp
Author
Vashchenko, V.A. ; Shibkov, A.A.
Author_Institution
Maxim Integrated Corp., San Jose, CA, USA
fYear
2014
fDate
7-12 Sept. 2014
Firstpage
1
Lastpage
8
Abstract
A new HV ESD protection avalanche diode design is proposed based on numerical analysis and experimentally validated. The device utilizes the double avalanche-injection conductivity modulation effect with additional diffusion ballasting region. It is demonstrated that the new solution provides lower on-state resistance normalized to area and lower capacitance compared to the conventional architecture of the integrated HV avalanche diodes.
Keywords
avalanche diodes; clamps; electrostatic discharge; numerical analysis; p-i-n diodes; diffusion ballasting region; double avalanche-injection conductivity modulation effect; integrated HV ESD protection avalanche diode design; lower capacitance; lower on-state resistance; numerical analysis; pseudop-i-n avalanche diode clamp; Clamps; Conductivity; Electrostatic discharges; Modulation; P-i-n diodes; PIN photodiodes; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location
Tucson, AZ
ISSN
0739-5159
Type
conf
Filename
6968854
Link To Document