• DocumentCode
    1668348
  • Title

    A 128 Mb NOR flash memory with 3 MB/s program time and low-power write performance by using in-package inductor charge-pump

  • Author

    Sundaram, Rajesh ; Javanifard, Johnny ; Walimbe, Priya ; Pathak, Bharat M. ; Melcher, Robert L. ; Wang, Peining ; Tacata, James I.

  • Author_Institution
    Intel Corp., Folsom, CA, USA
  • fYear
    2005
  • Firstpage
    50
  • Abstract
    Improved performance of flash memories requires programming more cells in parallel. This design uses an inductive pump to transfer the energy to a capacitor to achieve the needed voltage. The discrete inductor is bonded atop the die which also includes the control circuitry. With an inductive pump, the current saving in the program mode is 47.5 mA compared to a capacitive pump.
  • Keywords
    NOR circuits; flash memories; inductors; low-power electronics; microassembling; 128 Mbit; 3 MB/s; NOR flash memory; capacitor energy transfer; die bonded discrete inductor; in-package inductor charge-pump; inductive pump current saving; low-power write program time; parallel cell charging; program mode; Capacitors; Charge pumps; Circuits; Clocks; Flash memory; Inductors; Packaging; Pulse width modulation; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1493863
  • Filename
    1493863
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1668348