Title :
A 128 Mb NOR flash memory with 3 MB/s program time and low-power write performance by using in-package inductor charge-pump
Author :
Sundaram, Rajesh ; Javanifard, Johnny ; Walimbe, Priya ; Pathak, Bharat M. ; Melcher, Robert L. ; Wang, Peining ; Tacata, James I.
Author_Institution :
Intel Corp., Folsom, CA, USA
Abstract :
Improved performance of flash memories requires programming more cells in parallel. This design uses an inductive pump to transfer the energy to a capacitor to achieve the needed voltage. The discrete inductor is bonded atop the die which also includes the control circuitry. With an inductive pump, the current saving in the program mode is 47.5 mA compared to a capacitive pump.
Keywords :
NOR circuits; flash memories; inductors; low-power electronics; microassembling; 128 Mbit; 3 MB/s; NOR flash memory; capacitor energy transfer; die bonded discrete inductor; in-package inductor charge-pump; inductive pump current saving; low-power write program time; parallel cell charging; program mode; Capacitors; Charge pumps; Circuits; Clocks; Flash memory; Inductors; Packaging; Pulse width modulation; Silicon; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493863
