DocumentCode :
1668359
Title :
A 125 MHz burst-mode flexible read-while-write 256 Mbit 2b/c 1.8V NOR flash memory
Author :
Villa, C. ; Vimercati, D. ; Schippers, S. ; Confalonieri, E. ; Sforzin, M. ; Polizzi, S. ; Placa, M. La ; Lisi, C. ; Magnavacca, A. ; Bolandrina, E. ; Martinelli, A. ; Dima, V. ; Scavuzzo, A. ; Calandrino, B. ; Gatto, N. Del ; Scardaci, M. ; Mastroianni,
Author_Institution :
ST-Microelectron., Agrate Brianza, Italy
fYear :
2005
Firstpage :
52
Abstract :
A 1.8 V 256 Mb 2b/cell NOR flash memory is designed in a 130 nm technology. A fast gate-voltage-ramp constant-current-reading concept is implemented to obtain a robust read-while-write/erase function and 125 MHz burst read frequency.
Keywords :
NOR circuits; flash memories; 1.8 V; 125 MHz; 130 nm; 256 Mbit; NOR flash memory; burst read frequency; burst-mode flash memory; fast gate-voltage-ramp constant-current-reading method; flexible read-while-write flash memory; read-while-write/erase function; Costs; Flash memory; Frequency; Matrix converters; Memory architecture; Regulators; Silicon; Threshold voltage; Throughput; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
0-7803-8904-2
Type :
conf
DOI :
10.1109/ISSCC.2005.1493864
Filename :
1493864
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1668359
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