Title :
Single-crystalline ZnS nanobelts with sharp ultraviolet (UV) emission at room temperature as UV-light sensors
Author :
Fang, Xiaosheng ; Bando, Yoshio ; Liao, Meiyong ; Gautam, Ujjal K. ; Zhai, Tianyou ; Golberg, Dmitri
Author_Institution :
Int. Center for Young Scientists (ICYS), Nat. Inst. for Mater. Sci. (NIMS), Ibaraki, Japan
Abstract :
We have demonstrated an effective approach for the synthesis of single-crystalline ZnS nanobelts possessing sharp UV emission at RT via right selection of source materials and controlling their evaporation and agglomeration rates. Individual ZnS nanobelt-based UV-light sensors were fabricated, these showed a high potential as visible-blind UV photodetectors and ultra-fast optoelectronic switches. The sensor characteristics, including a spectral response, I-V curves under various light illuminations, and a time response were studied. The photoresponsivity of an individual ZnS nanobelt-based UV sensor exhibited over three orders of magnitude gain under the UV light illumination as compared to a visible light. The high spectral selectivity combined with high photosensitivity and fast time response (< 0.3 s) make the present single-crystalline ZnS nanobelts particularly valuable for new ¿visible-blind¿ UV photodetectors, especially in the UV-A region.
Keywords :
II-VI semiconductors; nanosensors; nanostructured materials; optical sensors; photodetectors; ultraviolet detectors; wide band gap semiconductors; zinc compounds; I-V curves; UV-light sensors; ZnS; light illuminations; photoresponsivity; room temperature; single-crystalline nanobelts; spectral response; spectral selectivity; temperature 293 K to 298 K; time response; ultra-fast optoelectronic switches; visible-blind UV photodetectors; Lighting; Nanoscale devices; Nanostructured materials; Photodetectors; Scanning electron microscopy; Semiconductor nanostructures; Sensor phenomena and characterization; Temperature sensors; Time factors; Zinc compounds;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424959