Self-heating enhanced impact ionization in SOI MOSFETs

Author

Su, P. ; Goto, K. ; Sugii, T. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2001

Firstpage

31

Lastpage

32

Abstract

Impact ionization (II) originates from energetic carriers in the channel. The II current is not only a monitor of device reliability, but also affects the current drive of partially-depleted (PD) SOI transistors by charging up the floating body and hence varying the threshold voltage. Due to the low thermal conductivity of buried oxide, SOI MOSFETs are susceptible to the local thermal heating generated in the channel. This SOI-specific self-heating effect (SHE) provides a source for carrier heating, which may determine impact ionization. In this paper we report an enhanced impact-ionization phenomenon caused by SHE in SOI MOSFETs.

Keywords

MOSFET; buried layers; impact ionisation; semiconductor device measurement; semiconductor device reliability; silicon-on-insulator; SOI MOSFETs; Si-SiO/sub 2/; buried oxide; carrier heating; current drive; device reliability; energetic carrier; floating body; impact ionization; local thermal heating; low thermal conductivity; partially-depleted SOI transistors; self-heating enhanced impact ionization; threshold voltage; Circuit simulation; Current measurement; Energy consumption; Heating; Impact ionization; Logic circuits; MOSFETs; Temperature dependence; Temperature sensors; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.957970

Filename

957970