Title :
Comparison of boron diffusion profiles in ultra thin SOI structures
Author :
Uchida, H. ; Ichimura, M. ; Arai, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
Abstract :
We have shown that B diffusion at 860/spl deg/C in the SOI structures is retarded as compared with that in bulk Si. The B diffusion retardation appears more clearly in the SIMOX structures than in the ELTRAN or UNIBOND structures. This indicates that the retardation depends on qualities of the active layer, e.g. density of extended defects and roughness of the BOX interface.
Keywords :
SIMOX; boron; diffusion; elemental semiconductors; extended defects; interface roughness; silicon; silicon compounds; silicon-on-insulator; 860 C; B diffusion; BOX interface; ELTRAN structures; SIMOX structures; Si:B-SiO/sub 2/; UNIBOND structures; active layer; boron diffusion profiles; diffusion retardation; extended defects; roughness; ultra thin SOI structures; Boron; Conductivity; Crystallization; Diffusion bonding; Fabrication; Hafnium; Impurities; Insulation; Silicon on insulator technology; Substrates;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957971
