• DocumentCode
    1668493
  • Title

    Comparison of boron diffusion profiles in ultra thin SOI structures

  • Author

    Uchida, H. ; Ichimura, M. ; Arai, E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
  • fYear
    2001
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    We have shown that B diffusion at 860/spl deg/C in the SOI structures is retarded as compared with that in bulk Si. The B diffusion retardation appears more clearly in the SIMOX structures than in the ELTRAN or UNIBOND structures. This indicates that the retardation depends on qualities of the active layer, e.g. density of extended defects and roughness of the BOX interface.
  • Keywords
    SIMOX; boron; diffusion; elemental semiconductors; extended defects; interface roughness; silicon; silicon compounds; silicon-on-insulator; 860 C; B diffusion; BOX interface; ELTRAN structures; SIMOX structures; Si:B-SiO/sub 2/; UNIBOND structures; active layer; boron diffusion profiles; diffusion retardation; extended defects; roughness; ultra thin SOI structures; Boron; Conductivity; Crystallization; Diffusion bonding; Fabrication; Hafnium; Impurities; Insulation; Silicon on insulator technology; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2001 IEEE International
  • Conference_Location
    Durango, CO, USA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6739-1
  • Type

    conf

  • DOI
    10.1109/SOIC.2001.957971
  • Filename
    957971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1668493