DocumentCode
1668500
Title
Field emission enhancement of amorphous carbon nitride films by the addition of argon to the reactive gas of nitrogen
Author
Li, Junjie ; Mimura, Hidenori ; Neo, Yoichiro ; Gu, Changzhi ; Li, Haijun ; Chen, Shuxia
Author_Institution
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear
2005
Firstpage
223
Lastpage
224
Abstract
In this paper, the addition of argon to the reactive gas of nitrogen caused the increase of the content and size of sp2-bonded clusters. This caused the domination of the local connectivity and lowered the surface tunnel barrier. Because of this, the field emission of amorphous carbon nitride (a-CNx) films was effectively enhanced.
Keywords
amorphous state; carbon compounds; electron field emission; thin films; CNx; Si; amorphous carbon nanotube films; argon; field emission; nitrogen; reactive gas; sp2-bonded clusters; surface tunnel barrier; Amorphous materials; Argon; Carbon dioxide; Diamond-like carbon; Electron emission; Nitrogen; Optical films; Semiconductor films; Spectroscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2005.1619566
Filename
1619566
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