DocumentCode
1668505
Title
Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure
Author
Park, Min Ji ; Chang, Young Wook ; Kang, Bong Keun ; Son, Min-Soo ; Lee, Jae Sang ; Lee, Sang Yeol ; Yoo, Kyung-Hwa
Author_Institution
Dept. of Phys., Yonsei Univ., Seoul, South Korea
fYear
2010
Firstpage
1195
Lastpage
1196
Abstract
We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.
Keywords
II-VI semiconductors; carbon nanotubes; elemental semiconductors; p-n heterojunctions; photoelectricity; rectification; semiconductor nanotubes; wide band gap semiconductors; zinc compounds; C-ZnO; I-V curves; diode rectifying behaviors; heterojunction structure; p-n junctions; photoelectrical properties; photoresponsive behaviors; Electrodes; Heterojunctions; Lighting; Optical films; P-n junctions; Sputtering; Substrates; Transistors; Voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424960
Filename
5424960
Link To Document