Title :
Gas cluster ion beam processing of SOI surfaces for improved gate oxide integrity
Author :
Allen, L.P. ; Hautala, J. ; Santeufemio, C. ; Brooks, W. ; Fenner, D.B. ; Lucking, T. ; Liu, M.
Author_Institution :
Epion Corp., Billerica, MA, USA
Abstract :
In this study, SOI substrates were delivered to Honeywell SSEC in order to assess the effectiveness of a gas cluster ion beam smoothing process on the gate oxide integrity (GOI) of silicon-on-insulator (SOI) wafers using a fast turn around GOI test process.
Keywords :
SIMOX; elemental semiconductors; silicon; sputter etching; substrates; surface topography; surface treatment; GOI test process; SIMOX; SOI substrates; SOI surfaces; Si-SiO/sub 2/; gas cluster ion beam processing; gate oxide integrity; ion beam smoothing process; silicon-on-insulator; Atomic force microscopy; Capacitors; Contacts; Dielectric substrates; Ion beams; Rough surfaces; Smoothing methods; Surface roughness; Testing; Voltage;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957972
