Title :
Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt
Author :
Chen, C.Y. ; Chang, P.H. ; Tsai, K.T. ; He, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1 × 10-5 ¿ cm2. The resistivity of the ZnO nanowires is measured to be 2.2 × 10-2 ¿ cm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ¿108 have been fabricated and characterized.
Keywords :
II-VI semiconductors; contact resistance; electrical resistivity; nanowires; photoconductivity; photodetectors; platinum; semiconductor quantum wires; semiconductor-metal boundaries; ultraviolet detectors; wide band gap semiconductors; zinc compounds; UV photodetectors; ZnO-Pt; contact resistance; focused ion beam deposition; photoconductive gain; resistivity; resistivity 0.022 ohmcm; single nanowires; transmission line method; transport properties; Conductivity; Contact resistance; Electrical resistance measurement; Helium; Length measurement; Nanoscale devices; Ohmic contacts; Photoconductivity; Transmission line measurements; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424962
