FTIR dosimetry mapping of as-implanted SIMOX wafers

Author

Yakovlev, V.A. ; Rosenthal, P.A. ; Anc, M.J.

Author_Institution

On-Line Products, MKS Instruments Inc, East Hartford, CT, USA

fYear

2001

Firstpage

39

Lastpage

40

Abstract

This report summarizes recent advances in the application of the On-Line´s FTIR FilmExpert/sup TM/ metrology tool for the characterization and uniformity control of SIMOX wafers. The SOI buried layer needs to be uniform within +/5%. This translates to +/- 25 A for 500 A SOI films and respectively less for 200 A SOI films over the large diameter wafers. The criterion is related to the requirement for the uniformity of threshold voltage and corresponding doping levels. The advanced FTIR measurements demonstrated the capability to perform fast mapping of oxygen implant dose with high precision (better than 0.5%) and excellent spatial resolution on as-implanted wafers. i.e. before time-consuming annealing which,finalizes SIMOX fabrication. The results illustrate the potential of the FilmExpert/sup TM/ as a process control tool for optimizing low-dose and ultra low-dose SIMOX manufacturing.

Keywords

Fourier transform spectra; SIMOX; buried layers; doping profiles; infrared spectra; ion implantation; semiconductor device measurement; semiconductor doping; 200 A; 500 A; FTIR dosimetry mapping; SOI buried layer; SOI films; annealing; as-implanted SIMOX wafers; doping levels; large diameter wafers; low-dose SIMOX manufacturing; oxygen implant dose; spatial resolution; threshold voltage uniformity; ultra low-dose SIMOX manufacturing; Annealing; Doping; Dosimetry; Fabrication; Implants; Metrology; Performance evaluation; Process control; Spatial resolution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.957974

Filename

957974