Title :
Effect of implant dose and energy on formation of thin SOI structure in SIMOX using water plasma
Author :
Jing Chen ; Meng Chen ; Xiang Wang ; Yemin Dong ; Zhihong Zheng ; Xi Wang
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
Thin SOI structures have been fabricated by an implanter without mass analyzer using 50-90 keV water ions ( H/sub 2/O/sup -/, HO/sup -/ and O/sup -/) with doses of 2.0-6.5 /spl times/ 10/sup 17/ cm/sup -2/ and subsequently high temperature annealing. The results indicate that this technique can be used to realize ultra-thin SOI materials at relatively lower cost.
Keywords :
SIMOX; ion implantation; plasma materials processing; silicon-on-insulator; 50 to 90 keV; H/sub 2/O; HO; O; SIMOX; high temperature annealing; implant dose; implant energy; implanter without mass analyzer; lower cost; thin SOI structure; water plasma; Annealing; Fabrication; Hydrogen; Implants; Ion sources; Metal-insulator structures; Nuclear and plasma sciences; Plasma temperature; Silicon on insulator technology; Transmission electron microscopy;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957976
