Title :
Simulations of ultrathin SOI with quantum transport models
Author :
Lyumkis, E. ; Mickevicius, R. ; Penzin, O. ; Polsky, B. ; El Sayed, K. ; Wettstein, A.
Author_Institution :
Integrated Syst. Eng. Inc, San Jose, CA, USA
Abstract :
In this report we investigate quantum effects in ultrathin SOIs in the framework of the density gradient model. It is demonstrated that this approach can correctly predict not only threshold voltage shifts but also spatial carrier distributions. The simulation results are in excellent agreement with the rigorous but computationally expensive solution of the Schrodinger equation coupled to the drift-diffusion transport equations.
Keywords :
Schrodinger equation; VLSI; carrier mobility; integrated circuit modelling; silicon-on-insulator; Schrodinger equation; density gradient model; drift-diffusion transport equations; quantum effects; quantum transport models; spatial carrier distributions; threshold voltage shifts; ultrathin SOI simulations; Electrons; Hydrodynamics; Modeling; Potential well; Predictive models; Quantization; Schrodinger equation; Silicon; Slabs; Threshold voltage;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957979
