Title :
Effects of laser drilling through silicon substrate on MOSFET device characteristics
Author :
Song, Youngkyu ; Park, Chulhyun ; Kang, Junghan ; Sohn, Ik-Bu ; Noh, Young-Chul ; Lee, Jongmin ; Lee, Eung Jang ; Park, Seung-Han ; Lee, Soogil ; Hong, Jongill ; Yun, Ilgu
Author_Institution :
Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling. The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
Keywords :
MOSFET; high-speed optical techniques; laser beam machining; semiconductor device reliability; Si; drain current; femtosecond laser; laser drilling; laser scanning line; n-type MOSFET device; reliability; silicon substrate; threshold voltage; through via holes; Degradation; Drilling; Laser ablation; Laser beam cutting; MOSFET circuits; Optical device fabrication; Optical pulses; Silicon; Testing; Threshold voltage;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424968
