• DocumentCode
    1668743
  • Title

    Short circuit III in high power IGBTs

  • Author

    Lutz, Josef ; Döbler, Ralf ; Mari, Jorge ; Menzel, Matthias

  • Author_Institution
    Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Short circuit III is the occurrence of a short circuit across the load during the conducting mode of the freewheeling diode. This has the same importance for the application of high power IGBTs as the known short circuit II. Different to short circuit II, the IGBT of the same module is now turned-on starting from very low voltage across its terminals and showing a forward recovery voltage before saturating. After that a dynamic short circuit peak current occurs similar to the one seen in SC II. During the short circuit, a reverse recovery process occurs at the freewheeling diode with a very high voltage slope.
  • Keywords
    diodes; insulated gate bipolar transistors; short-circuit currents; dynamic short circuit peak current; forward recovery voltage; freewheeling diode conducting mode; high power IGBT; reverse recovery process; short circuit III; Circuit testing; Commutation; Diodes; Inductance; Insulated gate bipolar transistors; Motor drives; Pulse width modulation inverters; Switches; Switching circuits; Voltage; Free wheel diode (FWD); IGBT; Reverse recovery; Robustness; Traction application;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
  • Conference_Location
    Barcelona
  • Print_ISBN
    978-1-4244-4432-8
  • Electronic_ISBN
    978-90-75815-13-9
  • Type

    conf

  • Filename
    5279057