Tuning exchange bias effects by ion-beam bombardment in NiFe/NiO bilayers

Author

Lin, Ko-Wei ; Huang, H.-R. ; Hsu, H.F. ; Yang, Y.-C. ; Guo, J.-Y. ; Suzuki, T. ; van Lierop, J.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

fYear

2010

Firstpage

1171

Lastpage

1172

Abstract

We have studied the correlation between the ion-beam bombardment and exchange bias effects in NiFe/NiO bilayers. The dependence of the exchange bias field, H_ex, with increasing V_EH suggests strongly that the Ar ion-beam bombardment process may increase the spin misalignment in FM/AF interfaces (resulting in a decrease of H_ex) or create uncompensated NiO spins (shown by a shift from negative to positive H_ex), depending on the energy used. The polarity switch from -H_ex to +H_ex occurred with increasing ion-beam bombardment time (t_bom.> 5 mins).

Keywords

argon; exchange interactions (electron); ion beam effects; multilayers; nickel compounds; Ar; Ar ion beam bombardment; FM/AF interfaces; NiFe-NiO; bilayers; exchange bias effects; polarity switch; spin misalignment; uncompensated NiO spins; Antiferromagnetic materials; Argon; Astronomy; Hysteresis; Lattices; Materials science and technology; Physics; Space technology; Switches; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424970

Filename

5424970