DocumentCode
1668813
Title
Al doped ZnO nanogranular film fabricated by LBL method and its application for gas sensors
Author
Hao, Weichang ; Sun, Meng ; Xu, Huaizhe ; Wang, Tianmin
Author_Institution
Center of Mater. Phys. & Chem., Beihang Univ., Beijing, China
fYear
2010
Firstpage
1173
Lastpage
1174
Abstract
The Al doped ZnO nanogranular films were fabricated by layer-by-layer (LBL) self-assembly method and the gas sensitivity of ZnO films were investigated. The results show that sensitivity of Al:ZnO gas sensors is up to 12 against 20000 ppm hydrogen, while the response time and recovery time of the sensor are only 8 s and 9 s respectively. The high sensitivity and fast response-recovery time are attributed to the high surface-to-volume ratio of nanogranular films.
Keywords
II-VI semiconductors; aluminium; gas sensors; self-assembly; wide band gap semiconductors; zinc compounds; ZnO:Al; gas sensitivity; gas sensors; layer-by-layer method; nanogranular film; self-assembly method; surface-to-volume ratio; Absorption; Gas detectors; Hydrogen; Optical films; Optical sensors; Optical surface waves; Physics; Self-assembly; Surface morphology; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424971
Filename
5424971
Link To Document