A parallel between silicon splitting kinetics study and IR absorption analysis

The Smart-Cut (R) process is based on ion implantation and wafer bonding. The ion implantation step leads to the formation of an in-depth weakened layer located around the mean ion penetration depth. The transfer of a superficial thin film can then be achieved thanks to the splitting in the weakened layer. Splitting can be obtained if a thermal treatment is applied to the structure. In this paper we focus on the results obtained on silicon, detailing a parallel between splitting kinetics studies and IR spectroscopy analysis.