• DocumentCode
    1668956
  • Title

    Field electron emission from gated Si tip arrays with DLC apexes

  • Author

    She, J.C. ; Hao, H. ; Deng, S.Z. ; Chen, Jun ; Xu, N.S. ; Huq, S.E. ; Wang, L.

  • Author_Institution
    State Key Lab. of Optoelectronic Mater. & Technol., Zhongshan Univ., Guangzhou, China
  • fYear
    2005
  • Firstpage
    252
  • Lastpage
    253
  • Abstract
    We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) apexes. It was found that for a 40×40 gated Si tip array with DLC apexes, an emission current density up to 0.23 A/cm2 can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.
  • Keywords
    diamond-like carbon; electron field emission; elemental semiconductors; silicon; 200 V; 38 to 50 V; DLC apexes; Si-C; diamond-like carbon; emission current density; field electron emission; gated Si tip array; turn-on gate voltage; Current density; Diamond-like carbon; Electron emission; Laboratories; Organic materials; Scanning electron microscopy; Semiconductor thin films; Sputtering; Thin film devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
  • Print_ISBN
    0-7803-8397-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2005.1619581
  • Filename
    1619581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1668956