Title :
A picosecond photodetector on SOI structures for 0.4 /spl mu/m band
Author :
Ohsawa, J. ; Misaki, T. ; Ibaragi, T.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
We describe the characteristics of a Schottky diode of Sm on p-Si, and then the photodetector characteristics including the dark and photo current and the temporal response to picosecond light pulses. Interdigital electrodes in the detecting area of about 50 /spl mu/m square showed a dark current of about 1 nA and a responsivity of 0.1 A/W at 488 nm wavelength. The response to picosecond light pulses at 395 nm exhibited an FWHM of about 50 ps at the bias of 10 V.
Keywords :
Schottky diodes; dark conductivity; photoconductivity; photodetectors; samarium; semiconductor device measurement; silicon; silicon-on-insulator; ultraviolet detectors; 0.4 micron; 1 nA; 10 V; 395 nm; 488 nm; FWHM; SOI structures; Schottky diode; Si-Sm; dark current; interdigital electrodes; photo current; picosecond light pulse temporal response; picosecond photodetector; responsivity; Conductivity; Current measurement; Dark current; Electrodes; Optical interconnections; Optical pulse generation; Photodetectors; Pulse measurements; Samarium; Silicon;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957992
