Title :
Investigation of SOI sensitivity to SEU-Influence of the buried oxide coupling effect
Author :
Colladant, T. ; Ferlet-Cavrois, V. ; L´Hoir, A. ; Baggio, J. ; Faynot, O.
Abstract :
Experimental measurements and 2D simulations have been used to investigate a capacitive effect through the buried oxide when charges are generated by a ionizing particle. This effect appears for a depiction in the substrate but is not sufficient to increase significantly the collected charge. An other mechanism such as a temporary conductive plasma path in the buried oxide is then necessary to increase the total collected charge in SOI drain region.
Keywords :
buried layers; ion beam effects; radiation hardening (electronics); semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor diodes; silicon-on-insulator; 2D simulations; SEU; SOI drain region; SOI sensitivity; Si-SiO/sub 2/; buried oxide; buried oxide coupling; capacitive effect; collected charge; diodes; heavy-ions; ionizing particle; single event upset; temporary conductive plasma path; total collected charge; CMOS technology; Conference proceedings; Current measurement; Diodes; Integrated circuit technology; Laser beams; Particle measurements; Plasma simulation; Pulse measurements; Random access memory;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957995
