Growth and characterization of Ni3FeN thin films by reactive gas timing RF magnetron sputtering

Author

Techitdheera, Wicharn ; Thassana, Chewa ; Pecharapa, Wisanu ; Nukaew, Jiti

Author_Institution

Dept. of Appl. Phys., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand

fYear

2010

Firstpage

1151

Lastpage

1152

Abstract

Ni₃FeN films were deposited on the glass substrate at room temperature by reactive gas timing rf magnetron sputtering, with two conditions: (1) a time period of Ar:N₂ gas (2) a flow rate of Ar:N₂ gas. Our results show that sputter rate increase with increasing of a time period and the rate of Ar:N₂ gas. The crystal structure of thin films was investigated by X-ray diffraction show fcc structure of Ni₃FeN (200) plane. The lattice constants increase with increasing of the flow rate of the nitrogen gas but it decrease with increasing of a time period of Ar gas. The grain size of thin films were investigated by atomic force microscope show the size range between 20-120 nm.

Keywords

X-ray diffraction; atomic force microscopy; crystal structure; glass; grain size; iron compounds; lattice constants; nickel compounds; sputter deposition; substrates; thin films; Ar-N₂; Ni₃FeN; RF magnetron sputtering; X-ray diffraction; atomic force microscope; crystal structure; flow rate; glass substrate; grain size; lattice constants; reactive gas timing; size 20 nm to 120 nm; temperature 293 K to 298 K; thin films; Argon; Atomic force microscopy; Glass; Grain size; Lattices; Nitrogen; Sputtering; Temperature; Timing; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424982

Filename

5424982