Title :
1.3 μm high-power short-cavity VCSELs for high-speed applications
Author :
Müller, M. ; Grasse, C. ; Saller, K. ; Gründl, T. ; Böhm, G. ; Ortsiefer, M. ; Amann, M.C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; high-speed optical techniques; indium compounds; surface emitting lasers; InP; InP-based VCSEL; high-power short-cavity VCSEL; high-speed applications; reduced internal losses; two dielectric DBR; vertical-cavity surface-emitting lasers; wavelength 1.3 mum; Bandwidth; Epitaxial layers; Frequency modulation; Heating; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
